THE ELECTRON-SPECTROSCOPIC INVESTIGATIONS OF THE EPITAXIAL CoSi2 FILMS ON SILICON
Keywords:
silicon, epitaxial, structure, vacuum, electron, zone, temperature, spectroscopy, CoSi2, molecular beam epitaxy method, electron-spectroscopic, silicid, peaks, spectra, filmsAbstract
This work is devoted to the study of the electronic structure, optical properties and electric resistance of the epitaxial layers CoSi2/Si produced in the ultrahigh vacuum conditions (p=10-7 Pa) by the molecular beam epitaxy method on Si surface (111). It has been shown that the forbidden zone width of solid CoSi2 films is 0.5-0.6 eV and there are two maximal of the electron state density in the valence zone. These films have the low specific resistance (p=20-25 µΩ.cm).
References
A.B.Zotov, B.B.Korobtsov. Poverkhnost. N-12 (1990) 5.
R.T.Tung et al., Appl. Phys. Lett. V.55, N-19, (1989) 3005.
L.Handerbache et al. Thin Solid Films. V.184 (1990) 317.
J.A.Roth, C. R. Crowell. Application of the silicon/slicide. V.15, N-4 (1978) 1317.
B.E.Egamberdiev,B.Ch.Cholliev,A.S.Mallaev,M.E.Zoirova Receiving films CoSi 2/Si(100) and analysis of their morphology and stekhmomstriya o metodama MLE,TFE and RE //Surface Engineering and Applied Electrochemistry N1,2007,p.88-92.
B.E.Egamberdiev "Ion doping asosida silitsidli tuzilmalarni hosil bo'lish mexanizmlari" Monografiya , Germaniya., изд. » Lamberg» 2020 йил, с.136 ISSN:978-620-2-51428-6
