KREMNIYDA CoSi2 EPITAXIAL GATLAMNING EELEKTRON-SPEKTROSKOPIK NOLATINI URGANISH
##article.subject##:
kremniy, epitaksial, tuzilish, vakuum, elektron, zona, harorat, spektroskopiya, CoSi2, molekulyar nur epitaksi, elektron spektroskopik, silisid, tepaliklar, spektrlar, filmlar##article.abstract##
Ushbu ish juda yuqori vakuum sharoitida (p = 10-7 Pa) Si (111) yuzasida molekulyar nurli epitaktsiya tomonidan olingan CoSi2 / Si epitaksial qatlamlarining elektron tuzilishini, optik xususiyatlarini va elektr qarshiligini o'rganishga bag'ishlangan. ... CoSi2 qattiq plyonkalarining tasma oralig'i 0,5-0,6 eV ga tengligi va valentlik diapazonida elektron holatlar zichligining ikkita maksimal darajasi borligi ko'rsatilgan. Ushbu plyonkalarning qarshiligi past (p = 20-25 mŌ.cm).
Библиографические ссылки
A.B.Zotov, B.B.Korobtsov. Poverkhnost. N-12 (1990) 5.
R.T.Tung et al., Appl. Phys. Lett. V.55, N-19, (1989) 3005.
L.Handerbache et al. Thin Solid Films. V.184 (1990) 317.
J.A.Roth, C. R. Crowell. Application of the silicon/slicide. V.15, N-4 (1978) 1317.
B.E.Egamberdiev,B.Ch.Cholliev,A.S.Mallaev,M.E.Zoirova Receiving films CoSi 2/Si(100) and analysis of their morphology and stekhmomstriya o metodama MLE,TFE and RE //Surface Engineering and Applied Electrochemistry N1,2007,p.88-92.
B.E.Egamberdiev "Ion doping asosida silitsidli tuzilmalarni hosil bo'lish mexanizmlari" Monografiya , Germaniya., изд. » Lamberg» 2020 йил, с.136 ISSN:978-620-2-51428-6
